1 single igbtmod? a-series module 6 00 ampere s / 1200 volts CM600HA-24A powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 outline drawing and circuit diagram dimensions inches millimeters a 4.25 108.0 b 3.66 93.0 c 0.63 16.0 d 0.30 7.5 e 0.69 17.5 f 1.14 29.0 g 0.79 20.0 h 0.94 24.0 j 0.31 7.9 k 0.24 6.0 l 2.44 62.0 m 1.89 48.0 description: powerex igbtmod? modules are designed for use in switching ap pli ca tions. each module con sists of one igbt transis- tor in a single con? guration with a reverse con nect ed super-fast recovery free-wheel diode. all components and in ter con nects are isolated from the heat sink ing baseplate, offering sim pli ? ed system assembly and ther mal management. features: low drive power low v ce(sat) discrete super-fast re cov ery free-wheel di ode isolated baseplate for easy heat sinking applications: dc chopper inverter ups forklift ordering information: example: select the complete part module number you desire from the table below - i.e. CM600HA-24A is a 1200v (v ces ), 600 am pere single igbtmod? power mod ule. type current rating v ces amperes volts (x 50) cm 600 24 dimensions inches millimeters n 0.39 10.0 p 0.39 10.0 q 0.51 13.0 r 0.33 8.5 s 1.42 36.0 t 1.02 25.8 u m6 metric m6 v m4 metric m4 w 0.256 6.5 x 0.79 20.0 y 0.35 9.0 c g e e e e g c a b c f k j e d m n p q r s u - thd. (2 typ.) v -thd. (2 typ.) w - dia. (4 typ.) y x t l h g 30c0686.eps
2 CM600HA-24A single igbtmod? a-series module 6 00 ampere s / 1200 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 absolute maximum ratings, o ml junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (dc, t c = 80c*) i c 600 amperes peak collector current i cm 1200** amperes emitter current*** (t c = 25c) i e 600 amperes peak emitter current*** i em 1200** amperes maximum collector dissipation (t c = 25c*, t j 150c) p c 3670 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb mounting torque, m4 g(e) terminal 15 in-lb weight 480 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, o ml o o collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 6.0 7.0 8.0 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c 2.1 3.0 volts i c = 600a, v ge = 15v, t j = 125c 2.4 volts total gate charge q g v cc = 600v, i c = 600a, v ge = 15v 3000 nc emitter-collector voltage** v ec i e = 600a, v ge = 0v 3.8 volts dynamic electrical characteristics, o ml o o input capacitance c ies 105 nf output capacitance c oes v ce = 10v, v ge = 0v 9 nf reverse transfer capacitance c res 2.0 nf inductive turn-on delay time t d(on) 660 ns load rise time t r v cc = 600v, i c = 600a, 190 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 0.52 , 700 ns time fall time t f inductive load 350 ns diode reverse recovery time*** t rr switching operation, 250 ns diode reverse recovery charge*** q rr i e = 600a 19.0 c *t c , t f measured point is just under the chips. **pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. ***represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi).
3 powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 CM600HA-24A single igbtmod? a-series module 6 00 ampere s / 1200 volts thermal and mechanical characteristics, o *?v *vv ml o*?? ? o q? thermal resistance, junction to case* r th(j-c) q per igbt ? 0 .034 c/w thermal resistance, junction to case* r th(j-c) d per fwdi ? 0.053 c/w contact thermal resistance r th(c-f) thermal grease applied ? 0.02 c/w external gate resistance r g 0.52 7.8 *t c , t f measured point is just under the chips. collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 -1 10 1 0 1 3 4 2 5 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitte r saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat ) , (volts ) collector-emitte r saturation voltage characteristics (typical) 4 3 0 300 90 0 2 1 0 1200 v ge = 15v t j = 25 c t j = 125 c v ge = 0v c ie s c oes c re s i c = 1200 a i c = 600a i c = 240 a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 1 0 300 0 v ge = 20v 10 11 12 15 13 9 t j = 25 o c 600 900 1200 600 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0.52 ? t j = 125 c inductive load t f 10 3 t j = 25 c t j = 125 c
4 CM600HA-24A single igbtmod? a-series module 6 00 ampere s / 1200 volts powerex, inc., 200 e. hillis street, youngwood, pennsylvania 15697-1800 (724) 925-7272 time, (s ) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.034c/w (igbt) r th(j-c) = 0.051c/w (fwdi) normalized transient thermal impedance, z th(j-c' ) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 1 6 12 8 4 0 900 1800 2700 4500 3600 v cc = 600v emitter current, i e , (amperes) reverse recovery, i rr , t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 v cc = 600v v ge = 15v r g = 0.52 ? t j = 25 c inductive load v cc = 400v i c = 600a 10 3 v cc = 600v v ge = 15v r g = 0.52 ? t j = 125 c inductive load collector current, i c , (amperes) emitter current, i e , (amperes) switching loss, (mj/pulse) 10 2 10 1 10 2 10 1 10 0 10 3 switching loss vs. collector current (typical) i rr t rr v cc = 600v v ge = 15v i c = 600a t j = 125 c inductive load gate resistance, r g , ( ? ) switching loss, (mj/pulse) 10 3 0 6 8 4 2 10 2 10 1 10 switching loss vs. gate resistance (typical) e on e of f e rr e on e of f e rr
|
